Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
Resource
IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 10, OCTOBER 2004
Journal
IEEE ELECTRON DEVICE LETTERS
Journal Volume
VOL. 25
Journal Issue
NO. 10
Pages
-
Date Issued
2004-10
Date
2004-10
Author(s)
Hua, W.C.
Lee, M.H.
Chen, P.S.
Maikap, S.
Liu, C.W.
Chen, K.M.
DOI
246246/200611150121592
Abstract
The flicker noise characteristics of strained-Si nMOSFETs
are significantly dependent on the gate oxide formation.
At high temperature (900 C) thermal oxidation, the Si interstitials
at the Si/oxide interface were injected into the underneath
Si–SiGe heterojunction, and enhanced the Ge outdiffusion into
the Si/oxide interface. The Ge atoms at Si/oxide interface act
as trap centers, and the strained-Si nMOSFET with thermal
gate oxide yields a much larger flicker noise than the control Si
device. The Ge outdiffusion is suppressed for the device with the
low temperature (700 C) tetraethylorthosilicate gate oxide. The
capacitance–voltage measurements of the strained-Si devices with
thermal oxide also show that the Si/oxide interface trap density
increases and the Si–SiGe heterojunction is smeared out due to
the Ge outdiffusion.
Subjects
Flicker noise
Ge outdiffusion
strained-Si
MOSFET
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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