Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism
Journal
Journal of Applied Physics
Journal Volume
121
Journal Issue
15
Pages
30276-30289
Date Issued
2017
Author(s)
Abstract
A metal-insulator-semiconductor (MIS) tunneling diode is a very promising sensor due to its deep depletion phenomenon. The coupling effect between two adjacent devices is therefore of importance. To study the MIS deep-depletion tunneling current coupling phenomenon, a device pattern of one centric circle coupled with one or two surrounding rings was devised. It was found that MIS(p) tunneling current with the Schottky barrier height modulation mechanism is enhanced just by locating more MIS(p) structures nearby or by shortening their relative distance, which can again be verified under light exposure. The MIS(n) structure was also fabricated for comparison. It was observed in MIS(n) that, with the lack of the Schottky barrier height modulation mechanism, tunneling current is greater and almost immune to light irradiance compared to MIS(p). Besides, the edge oxide of MIS(p) is removed to change its Schottky barrier height modulation capability. Significantly lower deep-depletion tunneling current and invulnerability to the adjacent minority condition were observed. Surprisingly, it offers smaller saturation voltage and better photosensitivity.
Type
journal article