Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

The surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells (MQW) were discussed. It was shown that the emission from the thin GaN cap layer quenches, but that from the InGaN wells prevails, when excited by a shorter wavelength at 248 nm. The emission from the InGaN/GaN MQWs was shown dominant by the recombination between the high-lying subbands and the screening of internal field effects by solving the rate and Poisson equations with a Fermi-level pinning in the band-structure analysis.