GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth

Journal

Journal of Crystal Growth

Journal Volume

311

Journal Issue

7

Pages

2084-2086

Date Issued

2009

Author(s)

Chang, Y.H.

Chiu, H.C.

Chang, W.H.

Kwo, J.

Tsai, C.C.

Hong, J.M.

DOI

10.1016/j.jcrysgro.2008.11.011

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443403

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349089776&doi=10.1016%2fj.jcrysgro.2008.11.011&partnerID=40&md5=c403d2824bca884aa4becaaa9ae867ab

Type

journal article