Bifunctional Energy Efficient (Ga,Ge)2O3:Cr3+,Ni2+ Phosphor for Shortwave Infrared Optical Applications
Journal
ACS Energy Letters
Start Page
3050
End Page
3057
ISSN
2380-8195
2380-8195
Date Issued
2025-06-05
Author(s)
Chen, Kuan-Chun
Hsiao, Yu-Hsuan
Chien, Chun-Ling
Huang, Wen-Tse
Majewska, Natalia
Mazurek, Michał R.
Leśniewski, Tadeusz
Mahlik, Sebastian
Leniec, Grzegorz
Cherng, Ding-Hua
Lu, Kuang-Mao
Abstract
A bifunctional (Ga,Ge)2O3:Cr3+,Ni2+ phosphor system for optical fiber amplifiers and light-emitting diode applications was investigated. By applying a solid-state reaction method, one Ga1.98-2xGexO3:0.02Cr3+,xNi2+ phosphor series is successfully prepared. The optimized composition demonstrated a broadband shortwave infrared (SWIR) emission at 1430 nm and a 10.6% absolute internal quantum efficiency value of Ni2+ emission. Electron paramagnetic resonance spectroscopy revealed detailed insights into the local environment of Cr3+ and its alteration by introducing Ni2+ dopants. When the laser-heated pedestal growth method was used, the grown crystal fibers exhibited promising characteristics for optical communication applications, particularly in the 1300-1600 nm telecommunication band. The dual functionality of the material was demonstrated by the fabrication of SWIR optical fiber amplifiers and light sources. This research introduces a versatile material platform that effectively addresses the challenges in optical fiber communications while offering new possibilities for SWIR light source applications.
Publisher
American Chemical Society (ACS)
Type
journal article