Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs

Journal

Electron Device Letters, IEEE

Journal Volume

19

Journal Issue

8

Pages

309-311

Date Issued

1998

Author(s)

Ren, F

Kuo, JM

Hobson, WS

Lothian, JR

Lin, J

Tsai, HS

Mannaerts, JP

Kwo, J

Chu, SNG

others

URI

http://scholars.lib.ntu.edu.tw/handle/123456789/340184

Type

journal article