Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes
Journal
Optics Letters
Journal Volume
26
Journal Issue
14
Pages
1099-1101
Date Issued
2001
Author(s)
Abstract
Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In0.67Ga0.33As0.72P0.28 quantum wells near the n-cladding layer and the two In0.53Ga0.47As quantum wells near the p-cladding layer, all bounded by In0.86Ga0.14As0.3P0.7 barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 μm, and the FWHM could be near 300 nm. © 2001 Optical Society of America.
Other Subjects
Superluminescent diodes; Electron transport properties; Light emission; Optical communication; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Light amplifiers
Type
journal article