Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide

Journal

Microelectronic Engineering

Journal Volume

85

Journal Issue

9

Pages

1915-1919

Date Issued

2008

Author(s)

Lin, C.-N.

Yang, Y.-L.

Chen, W.-T.

Lin, S.-C.

Chuang, K.-C.

DOI

10.1016/j.mee.2008.06.010

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-49549116191&doi=10.1016%2fj.mee.2008.06.010&partnerID=40&md5=50fed07956d52ff9930b73a4af4f8ca7

http://scholars.lib.ntu.edu.tw/handle/123456789/338630

Type

journal article