Light-emitting devices fabricated with cdse nano-crystals coated on an InGaN/GaN quantum-well structure for polychromatic generation
Resource
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Journal
Lasers and Electro-Optics Society Annual Meeting-LEOS
Journal Volume
2005
Pages
256-257
Date Issued
2005
Author(s)
Yeh, D.-M.
Lu, C.-F.
Huang, C.-F.
Tang, T.-Y.
Chen, H.-S.
Chuang, C.-M.
Abstract
By coating CdSe nano-crystals on an InGaN/GaN quantum well structure, polychromatic LEDs emitting blue and red lights have been implemented. The blue photons emitted by the quantum well structure are absorbed by the CdSe nano-crystals for emitting red light. By fabricating holes on the quantum well structure for filling up the nano-crystal solution, the red emission efficiency can be improved. © 2005 IEEE.
SDGs
Other Subjects
Gallium compounds; Nanostructured materials; Semiconducting indium compounds; Semiconductor quantum wells; Nanocrystal solution; Quantum well structure; Red emission efficiency; Light emitting diodes
Type
conference paper
File(s)![Thumbnail Image]()
Loading...
Name
01547976.pdf
Size
100.56 KB
Format
Adobe PDF
Checksum
(MD5):92b416b46377182fb8e9f34d5b5b358f