The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
Resource
Applied Surface Science 224,425-428
Journal
Applied Surface Science 224
Pages
425-428
Date Issued
2004
Date
2004
Author(s)
Hua, W.C.
Yang, T.Y.
Liu, C.W.
DOI
246246/2006111501233450
Abstract
Junction isolation is promising for cost reduction & high power circuit applications due to its relatively lower fabrication complexity & thermal conductivity, but larger area & collector-substrate capacitance (Ccs) seem drawbacks as compared to the deep trench isolation (DTI) technology. A simulation work is proposed for the size selection guide of unit cell to have the low cost benefit of junction isolation without sacrificing the gain & noise performance of the low noise amplifier (LNA) operated at 5.2 GHz.
Subjects
SiGe
Low noise amplifier
Deep trench isolation
Junction isolation
Mextram 504
Type
journal article
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