Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor
Journal
Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017
Pages
25-27
Date Issued
2017
Author(s)
Abstract
In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP 1dB ) 26 dBm and the power-added efficiency at OP 1dB of 25.7%.
SDGs
Type
conference paper