High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
Journal
Device Research Conference
Pages
275-276
Date Issued
2009
Author(s)
Abstract
Because of the superior material properties, silicon carbide (SiC) devices have drawn considerable attention in high power and high temperature applications. Promising performance has been demonstrated on both vertical and lateral devices. In this paper, we report the performance of high voltage lateral 4H-SiC JFETs built on a semiinsulating substrate. The drift region design is based on charge compensation of the n- and p-type materials.
Type
conference paper