Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells
Resource
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Journal
CLEO/Pacific Rim 2001
Date Issued
2001-07
Author(s)
Peng, L.H.
Hsu, K.T.
Shih, C.W.
Chuo, C.C.
Chyi, J.I.
Abstract
Large spectral red shifting (/spl sim/140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.
SDGs
Type
conference paper
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