A Broadband Transformer-Based Power Amplifier Achieving 24.5-dBm Output Power over 24-41 GHz in 65-nm CMOS Process
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
31
Journal Issue
3
Pages
308-311
Date Issued
2021
Author(s)
Abstract
A fully integrated one-stage cascode wideband power amplifier (PA) in 65-nm CMOS technology is presented in this letter. A matching technique is leveraged to achieve broadband matching network, which provides optimum load impedance for maximum output power within a wide operating frequency range. The proposed PA shows measured results of 24.5-dBm saturated output power (Psat) covering the full Ka-band (26.5-40 GHz) and 38.2% output 1-dB compression point (OP1dB) fractional bandwidth (BW) from 25 to 37 GHz. To the best of the authors' knowledge, the proposed PA demonstrates superior output power BW performance compared with the reported state-of-the-art Ka-band CMOS PAs. ? 2001-2012 IEEE.
Subjects
Bandwidth; Bandwidth compression; Cascode amplifiers; CMOS integrated circuits; Power amplifiers; 1dB compression point; Broadband matching networks; Broadband transformers; Fractional bandwidths; Maximum output power; Operating frequency; Saturated output power (Psat); Wideband power amplifier; Broadband amplifiers
SDGs
Type
journal article