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College of Science / 理學院
Applied Physics / 應用物理研究所
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
Details
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
Journal
Topical Workshop on Heterostructure Microelectronics
Pages
8
Date Issued
2000
Author(s)
Ren, F
MINGHWEI HONG
Wang, YC
Kwo, J
Mannaerts, JP
Abernathy, CR
Pearton, SJ
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/289565
Type
journal article