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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
Details
A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
Journal
Journal of Physics D: Applied Physics
Pages
495102
Date Issued
2012
Author(s)
M. H.Liao
M. H. Yu
T. C. Huang
L. T. Wang
T. L. Lee
S. M. Jang
H. C.Cheng
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/404521
Type
journal article
