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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
Details
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
Journal
Solid State Electronics
Journal Volume
70
Pages
3-7
Date Issued
2012-04
Author(s)
C. H. Chen
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
DOI
10.1016/j.sse.2011.11.013
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/373969
Type
journal article
