Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
Journal
Solid State Electronics
Journal Volume
70
Pages
3-7
Date Issued
2012-04
Author(s)
Abstract
This paper reports the function of the parasitic bipolar device in the 40 nm PD SOI NMOS device with the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during DC and transient operations could be modelled. During the turn-on transient by imposing a step voltage from 0 V to 2 V on the gate, the case with the a slower rise time shows a relatively faster turn-on in the drain current due to a stronger function of the parasitic bipolar device from smaller displacement currents through the gate oxide, as reflected in the current gain, as verified by the experimentally measured result. © 2011 Elsevier Ltd. All rights reserved.
Type
journal article