A Wideband GaAs pHEMT LNA Multi-band 5G mmW Communication
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
ISBN
9781665494182
Date Issued
2023-01-01
Author(s)
Abstract
This paper presents a millimeter-wave (mmW) wideband low noise amplifier (LNA) fabricated in 0.15-μ m GaAs pHEMT process. The LC π-type input matching network and gain-distributed technique are utilized to achieve the wideband low noise and high-gain performance. The proposed L N A achieves a 3-dB bandwidth (BW) of 25-43 GHz, with a small-signal peak gain of 24.8 dB. The lowest noise figure (NF) is 2.1 dB, and the average NF is 2.7 dB. The dc power consumption is only 79 mW under 2-V supplied voltage. This LNA demonstrates wide bandwidth, low noise, and high gain under a low dc power consumption.
Subjects
GaAs pHEMT | low noise amplifier (LNA) | millimeter-wave | wideband amplifier
Type
conference paper