A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD
Journal
Optics InfoBase Conference Papers
ISBN
9781557528209
Date Issued
2016-01-01
Author(s)
Hsu, Lung Hsing
Kuo, Chien Ting
Cheng, Yuh Jen
Chen, Kuan Chao
Kuo, Hao Chung
Lin, Shih Yen
Abstract
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.
Type
conference paper
