Design and Simulation of SiC Dual Trench Accumulation Channel Field Effect Transistor (ACCUFET) Structure
Date Issued
2014
Date
2014
Author(s)
Lee, Lung-Chieh
Abstract
To improve the energy conversion efficiency of power electronic systems, it is necessary to reduce the power losses during switching and on-state conduction of power semiconductor devices. SiC power devices are the best candidates because they have excellent material properties for high power density and high temperature applications. Among all sorts of power devices, SiC power MOSFET attracts the most attention because of its high frequency switching capability. However, low channel mobility, high interface state density as well as inferior oxide reliability still remain to be major obstacles to the development of SiC power MOSFET over the years. Therefore, it is imperative for us to overcome these issues. One way is to devise new power device structure.
In this thesis, a novel device structure called “dual trench ACCUFET” is proposed. We then simulate its electric performance and fabrication processes by using Silvaco software. After that, we analyze the simulation results and optimize the device’s performance by parameter, such as doping concentration, thickness and width, hoping to design a device exhibiting the breakdown voltage of 1200 volts, the on-resistance under 5 and the threshold voltage between 2 to 4 volts.
Subjects
金氧半功率電晶體
4H-碳化矽
累積型金氧半功率電晶體
氧化層穩定度
功率元件
Type
thesis
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