An 80GHz traveling-wave amplifier in a 90nm CMOS technology
Journal
IEEE ISSCC
Pages
154-155
Date Issued
2005-02
Author(s)
Abstract
A 6-stage travelling wave amplifier (TWA) implemented in a bulk 90nm CMOS technology is presented. By utilizing gate-line capacitive division and low-loss coplanar waveguides, the fabricated TWA exhibits 7.4dB gain with a 3dB bandwidth of 80GHz while maintaining input and output return losses better than 8dB from dc to 100GHz. A GBW of 190GHz is achieved.
SDGs
Type
conference paper
