Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs
Journal
GaAs IC Symposium Technical Digest 1992
Pages
47-50
Date Issued
1992
Author(s)
Abstract
Monolithic W-band voltage control oscillators (VCOs) have been developed based on 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low noise and power high-electron-mobility transistor (HEMT) technologies. An output power of 7.6 dBm at 92 GHz was obtained by using the low-noise HEMT, and 8.8 dBm was obtained at 90.5 GHz by using the power HEMT without any tuning on the matching structures. These VCOs can also be integrated with other W-band monolithic components using the same device technology. The success of this development makes possible the high-level integration of multifunctional monolithic microwave integrated circuit (MMIC) chips at W-band frequencies for various applications, such as monolithic receivers with local-oscillator chain, and single-chip transceivers in FMCW systems.>
SDGs
Type
conference paper