Light-emitting diodes on Si (110) substrate
Journal
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013
Pages
250-251
Date Issued
2013
Author(s)
Chen, C.-Y.
Chen, H.-S.
Liu, Z.H.
Lin, C.-H.
Su, C.-Y.
Chang, T.-W.
Shih, P.-Y.
Chen, C.-H.
Chou, W.-H.
Hsieh, C.
Chang, W.-M.
Kiang, Y.-W.
Abstract
We study the morphologies, material properties, and optical characteristics of an InGaN/GaN QW light-emitting diode (LED) structure grown on a -oriented one-dimensional trench-patterned Si (110) substrate with other samples of different trench orientations on Si (110) substrate, flat Si (110) substrate, and Si (111) substrate are demonstrated. By comparing the performances of the fabricated LEDs based on the three samples of continuous top surfaces, it is found that the sample of -oriented trench has the strongest output power, lowest device resistance, and smallest spectral shift range in increasing injection current.
SDGs
Type
conference paper