Bleaching dynamics of resonantly excited excitons in GaN thin films at room temperature
Resource
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Journal
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Pages
-
Date Issued
2002
Date
2002
Author(s)
DOI
N/A
Abstract
Summary form only given. Through optical absorption measurement, exciton ionization has been observed in GaN epilayers up to room temperature. By using transmission-type pump probe measurement around the exciton transition energy, we report, to our knowledge, the first direct measurement of exciton ionization process in wurzite GaN.
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
01034445.pdf
Size
397.18 KB
Format
Adobe PDF
Checksum
(MD5):c1574ec98f67effbe98322d5a4f833e8