砷銻化銦中紅外線材料與元件(2/2)
Date Issued
2005-10-31
Date
2005-10-31
Author(s)
DOI
932215E002013
Abstract
We report detailed studies of the growth and characterization of InAsSb/InAs multiple
quantum wells (MQWs) and InPSb alloy. The InAsSb/InAs MQW samples were grown by
molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to
0.13. From 4K PL, we observed staggered type-II behaviors of the MQWs. By comparing the
emission peak energies with a transition energy calculation, we found that both the
conduction and valence bands of InAsSb alloy have bowing effect. Their bowing parameters
are in the ratio of 4:6. For sample with Sb composition ~0.12, the emission band covers the
absorption peak of CO2, and thus a PIN LED with InAsSb/InAs MQW was fabrication. Its
emission wavelength is ~ 4 μm and is suitable for CO2 detector application. The growth of
InPSb on InAs substrates was also investigated. InPSb has a band gap energy of 0.64eV,
however, is located at a miscibility gap when it is nearly lattice-match to InAs. In this
investigation, we found that the coherent strain energy can form a local meta stable region
around the lattice-match composition. Therefore, by carefully optimizing the growth
parameters, we successfully grew high quality InPSb bulk layers on InAs substrates. This is
the first demonstration of MBE grown single phase InPSb bulk layers on InAs.
Subjects
III-V-Sb semiconductor
molecular beam epitaxy
Mid-Infrared optoelectronic
devices
devices
InAs
InAsSb
multiple quantum well
bowing parameter
InPSb
miscibility gap
coherent growth
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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