Infrared lasing in InN nanobelts
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
12
Pages
123109-1 - 123109-3
Date Issued
2007
Author(s)
Hu, M.-S.
Hsu, G.-M.
Chen, K.-H.
Yu, C.-J.
Hsu, H.-C.
Hwang, J.-S.
Hong, L.-S.
Abstract
Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ±(001) and ±(11¯0) planes. The infrared lasing action was observed at 20K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.
Publisher
American Institute of Physics
Type
journal article