Structural properties of InAs nanowires on (001) Si
Journal
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Date Issued
2016
Author(s)
Abstract
III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.
SDGs
Type
conference paper