A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology
Journal
10th Global Symposium on Millimeter-Waves, GSMM 2017
Pages
85-86
Date Issued
2017
Author(s)
Abstract
This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (P sat ) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm 2 .
SDGs
Type
conference paper