Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide
Journal
ECS Transactions
Journal Volume
35
Journal Issue
8
Pages
201-210
Date Issued
2011
Author(s)
Abstract
The influence of residual ions and gases at the Si/SiO2 interface in metal-oxide-semiconductor (MOS) structure was investigated in this study. A new processing step, room temperature (RT) vacuum treatment, was proposed to discuss the influence of them on the characteristics of the interface. Treatment sample was placed under low nitrogen pressure at room temperature after oxidation but before post-oxidation annealing (POA). It was found that the oxide layer becomes thinner, flat-band voltage (VFB) shifts to positive, much interface trap density (Dit), and less oxide charges effect in inversion region for the sample with the treatment.
Type
conference paper