Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide

Journal

ECS Transactions

Journal Volume

35

Journal Issue

8

Pages

201-210

Date Issued

2011

Author(s)

Chen, T.-Y.

Lu, H.-W.

Hwu, J.-G.

DOI

10.1149/1.3567751

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-79960859574&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/363033

Type

conference paper