Thermal Stress Analysis for Rapid Thermal Processor
Resource
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 2, MAY 2003
Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Journal Volume
VOL. 16
Journal Issue
NO. 2
Pages
-
Date Issued
2003-05
Date
2003-05
Author(s)
Chao, Ching-Kong
Hung, Shih-Yu
Yu, Cheng-Ching
DOI
246246/200611150121670
Abstract
Within the framework of linearized thermoelasticity
theory, the temperature and thermal stresses on the wafer for the
rapid thermal processor are solved by using the finite-difference
approach and a trapezoidal integration technique, respectively. Although
the equations governing the present thermoelastic system
are coupled in nature, the temperature can still be obtained independently
due to the fact that the coupling term is negligible as a
result of the strain rate being extremely small as compared with
unity. Based on the maximum shear stress failure criterion, the
calculated results show that material failure always occurs at the
edge of the wafer at the beginning of cooling processes. Furthermore,
the maximum stress control scheme is proved to be more
efficient that it can significantly reduce the required cooling time
and thermal budgets. Thus, the conventional constant cooling-rate
control scheme or linear temperature ramp-down scheme is not
appropriate for the rapid thermal processor.
Subjects
Cooling control
rapid thermal processor
thermal
stress
stress
transient heat transfer.
SDGs
Publisher
Taipei:National Taiwan University Coll Elect Engn
Type
journal article
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