Theoretical investigation of the C-V relationship for an amorphous silicon p-n junction
Journal
Solid State Electronics
Journal Volume
32
Journal Issue
9
Pages
727-731
Date Issued
1989
Author(s)
Tsai, H.-K.
Abstract
The use of capacitance-voltage measurement to probe the continuous gap state distribution of hydrogenated amorphous silicon is reconsidered. Since the capacitance is measured by a small a.c. voltage, whereas the data is plotted against d.c. voltage, care must be taken in extracting the gap state density from the slope of the capacitance-voltage curve. It is found that under large reverse bias, the 1/C2-V curve of an a-Si:H p+-n junction shows a linear relation, similar to a crystal junction, and that the density obtained is the total gap state charge density. © 1989.
Other Subjects
Semiconducting Silicon--Amorphous; Crystal Junction; Gap State Density; Hydrogenated Amorphous Silicon; Silicon p-n Junction; Semiconductor Devices
Type
journal article