Carrier-carrier scattering: An experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells
Journal
Solid State Communications
Journal Volume
115
Journal Issue
6
Pages
329-333
Date Issued
2000
Author(s)
Abstract
We have studied carrier dynamics among highly nonequilibrium career distributions generated with femtosecond laser pulses in Be:AlxGa1-xAs/GaAs quantum wells with different well width at hot carrier densities between 109 and 1011 cm-2. The spectra, at moderately high densities (≥1010 cm-2) indicate that the initially narrow electron distribution is altered in a time less than or equal to the LO-phonon emission time, as a result of rapid carrier-carrier scattering. At an excitation density of about 1010 cm-2, the carrier-carrier scattering rate is faster in narrower quantum wells. By measuring the intensity of the unrelaxed peak, it is possible to determine the relative rates of carrier-carrier scattering and LO-phonon emission. Our results indicate that carrier-carrier scattering becomes as significant as LO-phonon emission at a density of about 1×1010 cm-2 in the 5 nm quantum wells.
Type
journal article