Oxide roughness effect on tunneling current of MOS diodes

Journal

IEEE Transactions on Electron Devices

Journal Volume

49

Journal Issue

12

Pages

2204-2208

Date Issued

2002

Author(s)

Hsu, B.-C.

Chen, K.-F.

Lai, C.-C.

Lee, S.W.

DOI

10.1109/TED.2002.805229

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0037004303&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/298366

Type

journal article