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  4. CMOS RF Front-End Circuit Design for Low-Band Ultra-Wideband Systems
 
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CMOS RF Front-End Circuit Design for Low-Band Ultra-Wideband Systems

Date Issued
2005
Date
2005
Author(s)
Chen, Chang-Yu
DOI
en-US
URI
http://ntur.lib.ntu.edu.tw//handle/246246/57352
Abstract
Recently, due to the rapid growth of multimedia applications, high speed and high date rate in communication systems has become more and more important. Under this urgent demand, it accelerates the development and birth of the next-generation of wireless technology—ultra-wideband (UWB) systems. Nowadays, because of its advantage of low cost and low power dissipation, advanced CMOS process make it possible to integrate a UWB receiver into a single chip for VLSI implementation. In this thesis, the primary target is the RF front end design for low-band UWB applications. Two key components of the receiver are discussed and presented. The first design is a 3~5 GHz wideband low noise amplifier, which adopts stagger technique to achieve a wideband characteristic. The wideband matching problem of LNA is solved by using common gate resistive feedback (CGRF) architecture. The second design is a wideband mixer, which utilizes the shunt-shunt feedback to enhance its bandwidth. Finally, the complete receiver chain for UWB applications which contains a LNA and two mixers is designed and simulated. The total power consumption of the receiver front-end circuit is 33mW under 1.8V supply voltage and chip area is about 1.37 x 1.05 mm2. All the circuits are verified from post-layout simulation. The former is presented with measurement results.
Subjects
超寬頻
射頻前端
低雜訊放大器
混頻器
ultra-wideband
RF front-end
low noise amplifier
mixer
Type
thesis
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ntu-94-R92943010-1.pdf

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