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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon
Details
Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon
Journal
Materials Research Society Symposium
Journal Volume
609
Date Issued
2000
Author(s)
Cheng, I.-C.
Wagner, S.
Mulato, M.
I-CHUN CHENG
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034431068&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/289896
Type
conference paper
