Experimental evidence of a metal-insulator transition in a half-filled Landau level
Journal
Solid State Communications
Journal Volume
102
Journal Issue
4
Pages
327-330
Date Issued
1997
Author(s)
Abstract
We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al0.33Ga0.67As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor ν -1/2, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared. © 1997 Elsevier Science Ltd. All rights reserved.
SDGs
Type
journal article