Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition
Journal
Vacuum
Journal Volume
207
Date Issued
2023-01-01
Author(s)
Feng, Zhe Chuan
Xin, Bin
Tsai, Shi Jane
Saravade, Vishal
Yiin, Jeffrey
Klein, Benjamin
Ferguson, Ian T.
Abstract
Hetero-epitaxy of 3C–SiC on Si-face and C-face 4H–SiC is experimentally investigated and corresponding growth model is identified. This study of polytypes of SiC will be useful for band-gap engineering, optical, electrical, and electronic applications of SiC. 3C–SiC was epitaxially deposited on 4H–SiC using a high temperature chemical vapor deposition. The primary factor affecting the epi-quality on Si-face SiC is double positioning boundary (DPB) defect. An adatom migration model elucidates the formation of the V-shaped DPB defect structures. On C-terminated 4H–SiC, super-V-shaped-structure (SVSS) defects and polycrystalline complexes in 3C–SiC are formed. These characteristics of 3C–SiC are measured and analyzed using transmission electron microscopy, X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. A model considering adatoms' migration in step-flow direction and anti-step-flow direction explains the SVSS defects. Effects of both step-flow and anti-step-flow growth mode on the atom adsorption near the step edge are discussed.
Subjects
3C–SiC on 4H–SiC | And scanning electron microscopy | Atomic force microscopy | Chemical vapor deposition | Transmission electron microscopy | X-ray diffraction
Type
journal article