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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition
Details
Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition
Journal
Physica Status Solidi C: Conferences
Journal Volume
2
Journal Issue
7
Pages
2377-2380
Date Issued
2005
Author(s)
CHIH-CHUNG YANG
Feng, Z.C.
Liu, W.
Chua, S.J.
Chen, J.H.
Yang, C.C.
Lu, W.
Collins, W.E.
CHIH-CHUNG YANG
DOI
10.1002/pssc.200461496
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-27344446831&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/314809
Type
conference paper