Investigation of Electronic Properties of MoxW1-xS2 Alloy by Tight-binding Method for Interband transition
Journal
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Journal Volume
2019-July
Pages
121-122
Date Issued
2019
Author(s)
Abstract
Two dimensional (2D) materials have been popular recently due to their low-dimensional transport properties. And transition metal dichalcogenides (TMDCs) show a wide range of electronic and optical properties. In this paper, the electronic and optical properties of Mo x W 1-x S 2 alloy such as band structure, bandgap, effective mass and absorption coefficient are modeled by sp 3 d 3 tight-binding model.
Type
conference paper