A model calculation on optical gain and co-stimulated emissions of phonons and phonons in silicon
Resource
Group IV Photonics, 2005. 2nd IEEE International Conference on
Journal
Group IV Photonics, 2005. 2nd IEEE International Conference on
Pages
-
Date Issued
2005-09
Date
2005-09
Author(s)
Chen, M.J.
DOI
N/A
Abstract
This study presents a model calculation on the optical gain and bandgap energy and the rate equations for electron, photon, and phonon in silicon which takes into account the detailed band-edge structures of the conduction and valence bands. The approach and findings of this model calculation are systematically presented.
SDGs
Type
journal article
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