Electroluminescence at Si band gap energy based on metal–oxide–silicon structures
Resource
Journal of Applied Physics 87 (12): 8793-8795
Journal
Journal of Applied Physics
Journal Volume
87
Journal Issue
12
Pages
8793-8795
Date Issued
2000
Date
2000
Author(s)
DOI
Abstract
Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics.
Type
journal article
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