Microcrystalline silicon deposited by glow discharge decomposition of heavily diluted silane
Journal
Materials Chemistry and Physics
Journal Volume
32
Journal Issue
3
Pages
273-279
Date Issued
1992
Author(s)
Abstract
The growth kinetics, electrical and structural properties of microcrystalline silicon formed by direct glow discharge decomposition of heavily hydrogen diluted silane were studied. It is found that by changing the volume fraction of silane to below 5%, phase transition from amorphous to microcrystalline silicon occurred. However, when the silane fraction is further reduced to below 2%, the microcrystalline silicon converts back to the amorphous phase. Several kinds of measurements, i.e. transmission electron microscopy, infrared absorption, conductivity, etc., were used to study the various properties of the films. It is found that the grain size of microcrystalline silicon increases from 30-50 nm as the volume fraction of silane decreases from 5% down to about 2% and then decreases again. A model is given to explain the observed phenomena. © 1992.
Type
journal article