The improvement of polycrystalline silicon TFTs fabricated by employing periodic metal pads
Journal
IEEE Transactions on Electron Devices
Journal Volume
53
Journal Issue
8
Pages
1939-1943
Date Issued
2006
Author(s)
Abstract
Polysilicon films with regular-sized and large grains were fabricated by employing periodic metal (Cr-Al) pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The poly-Si could grow to regular hexagonal grains after excimer laser annealing (ELA). The thin-film transistors (TFTs) fabricated by this method show uniform characteristics that are suitable for large-area applications. The TFT achieves a field-effect mobility of 270 cm2/V · s and an on-off current ratio exceeding 108. It is found that the TFT with the smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and, thus, fewer defects. After comparing the performance of TFTs using either double-metal Cr-Al or single-metal Al photonic-crystal pads, it is found that the Cr could efficiently impede the diffusion of Al into Si during ELA. © 2006 IEEE.
Subjects
Photonic crystal; Polycrystalline silicon; Thin-film transistor (TFT)
Other Subjects
Annealing; Defects; Grain boundaries; Heat sinks; Polysilicon; Semiconductor device manufacture; Heat absorption layer; Periodic metal pads; Photonic crystal; Silicon oxynitride (SiON); Thin film transistors
Type
journal article