Granular Fe-Pb-O films with large tunneling magnetoresistance
Journal
Applied Physics Letters
Journal Volume
72
Journal Issue
17
Pages
2171-2173
Date Issued
1998
Author(s)
Abstract
A method of manufacturing granular Fe-Pb-O films is described. The temperature dependence of resistivity in these samples exhibits a semiconductorlike behavior indicating that the electronic transport takes place via a tunneling process. The magnetoresistance ratio has been found to be about 10% at room temperature. The enhancement of the tunneling magnetoresistance effect is believed to be due to spin-dependent tunneling through the tunneling barrier containing magnetic ferrite formed by PbO and α-Fe2O3. © 1998 American Institute of Physics.
SDGs
Type
journal article