Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
Journal
Applied Physics Letters
Journal Volume
125
Journal Issue
15
ISSN
0003-6951
1077-3118
Date Issued
2024-10-07
Author(s)
Abstract
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapping independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron–electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage–current characteristics that are a signature for the collective depinning and sliding of the electron solid.
SDGs
Publisher
AIP Publishing
Type
journal article