Silicon Nanoscale Thin Structure: Device and Measurement
Date Issued
2010
Date
2010
Author(s)
Huang, Chun-Han
Abstract
The nanostructure can enhance the electrical and optical properties. In this thesis, we use silicon nanoscale thin structure to study the electrical and optical performance in silicon, so we can use silicon nanostructure for electronic and opto-electrical devices applications, especially for optical interconnects.
The focus of this thesis is the silicon nanoscale thin structure fabrication and measurement. In the nanostructure fabrication, we use slow and smooth etching recipe of KOH and build up the dry oxygen oxidation model at 1000℃ to control the thin film thickness of silicon accurately. We use the silicon on insulator wafer to get the Si nanoscale thin structure. This result can be used in electronic and opto-electronic devices such as the thin film transistors and modulators. In the measurement part, we fabricate the device with silicon nanoscale thin structure and use the monochromator system to measure the optical transmittance of the nanostructure between a wavelength range from 350 nm to 500 nm. The transmittance curves have a sharp reduction in each device of difference silicon thicknesses for the wavelength range less than 400 nm. Therefore, the silicon nanoscale thin structure has a strong absorption coefficient for short wavelength optical device applications.
Subjects
Silicon
Nanoscale thin structure
KOH etching
Dry oxygen oxidation
Oxidation
Type
thesis
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