Gate-all-around Ge FETs
Journal
ECS Transactions
Journal Volume
64
Journal Issue
6
Pages
317-328
Date Issued
2014
Author(s)
Abstract
High performance Ge inversion (INV) and junctionless (JL) GAAFETs are demonstrated. The (111) sidewall-enhanced Ge GAA nFETs show 2x enhanced I on of 110 mA/mm at 1V with respect to the devices with near (110) sidewalls and subthreshold characteristics of 94 mV/dec. The JL Ge GAA pFETs with fin width (W fin ) down to 27 nm and channel concentration (N ch ) of 5×10 18 cm -3 has I on /I off = 1.5×10 6 , SS = 95 mV/dec, and I on = 194 mA/mm at V GS - V T = -2V and V DS = -1 V.
Type
conference paper