HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy
Date Issued
2014
Date
2014
Author(s)
Chen, Chang- Ying
Abstract
In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We hope we can get a better result by different surface treatments .
Subjects
iii-v
hfo2
mbe
Type
thesis