A single-element CMOS-based electronic de-embedding technique with TRL level of accuracy
Journal
2015 IEEE MTT-S International Microwave Symposium, IMS 2015
Date Issued
2015
Author(s)
簡俊超
Abstract
A single-element de-embedding algorithm with accuracy comparable to TRL is proposed. By performing impedance modulation using CMOS transistors, reflection measurements with ideal shorts are generated from the measured two-port S-parameters. Such measurements with known termination are further utilized for finding the solutions to the test fixtures. As a single structure is sufficient for the extraction of the device S-parameter, saving not only the silicon area but also improving the accuracy due to reduced number of probing. Experimental results up to 65 GHz have validated the proposed single-element approach.
SDGs
Type
conference paper