Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar
Resource
proceeding of SPIE,,Vol 7058,70580-nil.
Journal
Eighth International Conference on Solid State Lighting
Pages
70580G
Date Issued
2008-08
Date
2008-08
Author(s)
Ferguson, Ian T.
Taguchi, Tsunemasa
Yu, Peichen
Chiu, C. H.
Ashdown, Ian E.
Park, Seong-Ju
Chang, Cheng-Yu
Kuo, H. C.
Abstract
We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.
Subjects
GaN; InGaN; Nanopillar; Nanorod; Strain relaxation; Valence force field model
SDGs
Other Subjects
Blue shifts; Emission spectrums; GaN; Gan/ingan; Induced polarizations; InGaN; Multiple quantum wells; Nanopillar; Nanopillar structures; Quantum wells; Spectrum shifts; Strain distributions; Strain relaxation mechanisms; Valence force field model; Valence force fields; Emission spectroscopy; Focused ion beams; Gallium alloys; Gallium nitride; Ion bombardment; Light emission; Luminescence; Poisson distribution; Semiconducting gallium; Semiconductor materials; Semiconductor quantum wires; Strain control; Strain relaxation; Water pollution; Wells; Semiconductor quantum wells
Type
conference paper